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IRFP264 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part | IRFP264 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
·FEATU RES ·Static drain-source on-resistance :
RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-t o-Lot variations for robust device
perf ormance and reliable operation
·APPLI CATIONS ·Fast switching power applicat ion
·ABSOLUTE MAXIMUM RATINGS(Ta=25â„ ƒ)
SYMBOL
PARAMETER
VALUE
VDSS
Dra in-Source Voltage
250
VGS
Gate-Sourc e Voltage
±20
ID
Drain Current-Cont inuous
38
IDM
Drain Current-Single P ulsed
150
PD
Total Dissipation @TC=2 5℃
280
Tj
Max. Operating Junction Temperature 150 Tstg Storage Tempera ture -55~150 UNIT V V A A W ℃ . |
| Manufacture | INCHANGE |
| Datasheet |
| Part | IRFP264 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
·FEATU RES ·Static drain-source on-resistance :
RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-t o-Lot variations for robust device
perf ormance and reliable operation
·APPLI CATIONS ·Fast switching power applicat ion
·ABSOLUTE MAXIMUM RATINGS(Ta=25â„ ƒ)
SYMBOL
PARAMETER
VALUE
VDSS
Dra in-Source Voltage
250
VGS
Gate-Sourc e Voltage
±20
ID
Drain Current-Cont inuous
38
IDM
Drain Current-Single P ulsed
150
PD
Total Dissipation @TC=2 5℃
280
Tj
Max. Operating Junction Temperature 150 Tstg Storage Tempera ture -55~150 UNIT V V A A W ℃ . |
| Manufacture | INCHANGE |
| Datasheet |
　
　
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