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IRFP2907 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part | IRFP2907 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
IRFP290 7，IIRFP2907
·FEATURES ·Static drai n-source on-resistance:
RDS(on)≤4. 5mâ „¦ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reli able operation ·DESCRITION ·Ultra Lo w On-resistance ·Fast Switching ·ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 209 IDM Drain Current-Single Pulsed 840 PD Total Dissipation @TC=25℃ 470 Tj Max. Operating Junction Temperatur e 175 Tstg Storage Temperature . |
| Manufacture | INCHANGE |
| Datasheet |
| Part | IRFP2907 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
IRFP290 7，IIRFP2907
·FEATURES ·Static drai n-source on-resistance:
RDS(on)≤4. 5mâ „¦ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reli able operation ·DESCRITION ·Ultra Lo w On-resistance ·Fast Switching ·ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 209 IDM Drain Current-Single Pulsed 840 PD Total Dissipation @TC=25℃ 470 Tj Max. Operating Junction Temperatur e 175 Tstg Storage Temperature . |
| Manufacture | INCHANGE |
| Datasheet |
　
　
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