IRFP4229

isc N-Channel MOSFET Transistor IRFP4229，IIRFP4229 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤46mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 310 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -40~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.49 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFP4229，IIRFP4229 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 250 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 3.0 V 5.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=26A 46 mΩ IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=250V; VGS= 0V VSD Diode forward voltage IS=26A, VGS = 0V ±0.1 μA 20 μA 1.3 V NOTICE： ISC reserves the rights to make cha...