isc N-Channel MOSFET Transistor
IRFP4668,IIRFP4668
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.7mΩ ·Enhanc...
isc N-Channel MOSFET
Transistor
IRFP4668,IIRFP4668
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.7mΩ ·Enhancement mode:
Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
130
IDM
Drain Current-Single Pulsed
520
PD
Total Dissipation @TC=25℃
520
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 0.29 40
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IRFP4668,IIRFP4668
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
200
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
3.0
V
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=81A
9.7 mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
VSD
Diode forward voltage
IS...