IRFP4768

isc N-Channel MOSFET Transistor IRFP4768，IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·High Speed Power Switching ·Hard Switched And High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 93 IDM Drain Current-Single Pulsed 370 PD Total Dissipation @TC=25℃ 520 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.29 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFP4768，IIRFP4768 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 250 V 3.0 5.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=56A 17.5 mΩ IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=250V; VGS= 0V VSD Diode forward voltage IS=56A, VGS = 0V ±0.1 μA 20 μA 1.3 ...