isc N-Channel MOSFET Transistor
IRFS7534TRLPBF
DESCRIPTION ·Drain Current –ID=232 A@ TC=25℃ ·Drain Source Voltage-
: V...
isc N-Channel MOSFET
Transistor
IRFS7534TRLPBF
DESCRIPTION ·Drain Current –ID=232 A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS · Improved Gate, Avalanche and Dynamic dV/dt Ruggedness · Fully Characterized Capacitance and Avalanche SOA · Enhanced body diode dV/dt and dI/dt Capability · Lead-Free, RoHS Compliant
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
232
A
Ptot
Total Dissipation@TC=25℃
294
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~175 ℃ MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.51 ℃/W
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isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=0.25mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 100A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=60V; VGS= 0
VSD
Forward On-Voltage
IS= 100A; VGS=0
IRFS7534TRLPBF
MIN TYP. MAX UNIT
60
V
2.1
3.7
V
2.0
2.4
mΩ
±100 nA
1
uA
1.2
V
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