IRFS7534TRLPBF

isc N-Channel MOSFET Transistor IRFS7534TRLPBF DESCRIPTION ·Drain Current –ID=232 A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Improved Gate, Avalanche and Dynamic dV/dt Ruggedness · Fully Characterized Capacitance and Avalanche SOA · Enhanced body diode dV/dt and dI/dt Capability · Lead-Free, RoHS Compliant ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 232 A Ptot Total Dissipation@TC=25℃ 294 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.51 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=0.25mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 100A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 VSD Forward On-Voltage IS= 100A; VGS=0 IRFS7534TRLPBF MIN TYP. MAX UNIT 60 V 2.1 3.7 V 2.0 2.4 mΩ ±100 nA 1 uA 1.2 V NOTICE： ISC reserves the rights to make cha...