isc N-Channel MOSFET Transistor
IRLR3103, IIRLR3103
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤19mΩ ·Enhanc...
isc N-Channel MOSFET
Transistor
IRLR3103, IIRLR3103
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤19mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±16
ID
Drain Current-Continuous
55
IDM
Drain Current-Single Pulsed
220
PD
Total Dissipation @TC=25℃
107
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1.4 110
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IRLR3103, IIRLR3103
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
30
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
1.0
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=19A
19
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±16V
IDSS
Drain-Source Leakage Current
VDS=30V; VGS= 0V
VSD
Diode forward voltage
Is=28A, VGS = 0V
±0.1 μA
25
μA
1.3
V
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