IRLR3114Z

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 140 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.05 110 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRLR3114Z, IIRLR3114Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 40 VGS(th) Gate Threshold Voltage VDS=VGS; ID=100μA 1.0 V 2.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=42A 4.9 mΩ IGSS Gate-Source Leakage Current VGS=±16V IDSS Drain-Source Leakage Current VDS=40V; VGS= 0V VSD Diode forward voltage Is=42A, VGS = 0V ±0.1 μA 20 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informati...