IRLR3303

isc N-Channel MOSFET Transistor IRLR3303,IIRLR3303 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤31mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.2 110 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRLR3303,IIRLR3303 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 30 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 1 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=21A 31 mΩ IGSS Gate-Source Leakage Current VGS= ±16V IDSS Drain-Source Leakage Current VDS=30V; VGS= 0V VSD Diode forward voltage IS=20A, VGS = 0V ±0.1 μA 25 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained ...