isc N-Channel MOSFET Transistor
IRLR3636, IIRLR3636
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6.8mΩ ·Enhan...
isc N-Channel MOSFET
Transistor
IRLR3636, IIRLR3636
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±16
ID
Drain Current-Continuous
99
IDM
Drain Current-Single Pulsed
396
PD
Total Dissipation @TC=25℃
143
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1.05 110
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IRLR3636, IIRLR3636
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=250μA
60
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=100μA
1
V
2.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=50A
6.8 mΩ
IGSS
Gate-Source Leakage Current
VGS= ±16V
IDSS
Drain-Source Leakage Current
VDS=60V; VGS= 0V
VSD
Diode forward voltage
Is=50A, VGS = 0V
±0.1 μA
20
μA
1.3
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in...
