IRLR3802

isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 12 VGS Gate-Source Voltage ±12 ID Drain Current-Continuous 84 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 88 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.7 110 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRLR3802, IIRLR3802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 12 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 0.6 V 1.9 V RDS(on) Drain-Source On-Resistance VGS=4.5V; ID=15A 8.5 mΩ IGSS Gate-Source Leakage Current VGS= ±12V IDSS Drain-Source Leakage Current VDS=9.6V; VGS= 0V VSD Diode forward voltage Is=12A, VGS = 0V ±0.2 μA 0.1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information...