IRLR9343

isc P-Channel MOSFET Transistor IRLR9343,IIRLR9343 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤105mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175°C operating junction temperature ·Repetitive avalanche capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -20 IDM Drain Current-Single Pulsed -60 PD Total Dissipation @TC=25℃ 79 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -40~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.9 110 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -0.25mA RDS(on) Drain-Source On-Resistance VGS= -10V; ID=-3.4A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS= -55V; VGS= 0V VSD Diode forward voltage Is= -14A, VGS = 0V IRLR9343,IIRLR9343 MIN TYP MAX UNIT -55 V -1.0 V 105 mΩ ±0.1 μA -2 μA -1.2 V NOTICE： ISC reserves the rights to make changes of the content herein...