Power MOSFET. IXTY26P10T Datasheet

IXTY26P10T MOSFET. Datasheet pdf. Equivalent

Part IXTY26P10T
Description Power MOSFET
Feature TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T .
Manufacture IXYS
Datasheet
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TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche IXTY26P10T Datasheet
Recommendation Recommendation Datasheet IXTY26P10T Datasheet




IXTY26P10T
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTY26P10T
IXTA26P10T
IXTP26P10T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
- 100
V
- 100
V
15
V
25
V
- 26
A
- 80
A
- 26
A
300
mJ
150
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250A
VGS(th)
VDS = VGS, ID = - 250A
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
50 nA
-10 A
- 250 A
90 m
VDSS =
ID25 =
RDS(on)
- 100V
- 26A
90m
TO-252 (IXTY)
G
S
TO-263 (IXTA)
D (Tab)
G
S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low RDS(ON) and QG
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS100291B(8/17)



IXTY26P10T
IXTY26P10T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3(External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max.
10
17
S
3820
pF
280
pF
93
pF
20
ns
15
ns
37
ns
11
ns
52
nC
18
nC
16
nC
0.83 C/W
0.50 C/W
IXTA26P10T
IXTP26P10T
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 0.5 • ID25, -di/dt = -100A/s
VR = - 50V, VGS = 0V
Characteristic Values
Min. Typ. Max.
- 26 A
-104 A
-1.5 V
70
ns
210 nC
-6
A
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537





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