Power MOSFET
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTY26P10T IXTA26P10T IXTP26P10T
Symbol
VDSS VDGR
VG...
Description
TrenchPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTY26P10T IXTA26P10T IXTP26P10T
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
Maximum Ratings
- 100
V
- 100
V
15
V
25
V
- 26
A
- 80
A
- 26
A
300
mJ
150
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250A
VGS(th)
VDS = VGS, ID = - 250A
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
50 nA
-10 A - 250 A
90 m
VDSS =
ID25 = RDS(on)
- 100V - 26A
90m
TO-252 (IXTY)
G S
TO-263 (IXTA)
D (Tab)
G S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages Avalanche Rated Extended FBSOA Fast Intrinsic Diode Low RDS(ON) and QG
Advantages
Easy to Mount Space Savings High Power Density
Applications
High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment C...
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