isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Stat...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.009Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
170
A
IDM
Drain Current-Single Plused
350
A
PD
Total Dissipation @TC=25℃
715
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.25 ℃/W
IXTQ170N10P
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-voltage
IS= IF, ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 85A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS= 0
IXTQ170N10P
MIN TYPE MAX UNIT
100
V
2.0
5.0
V
1.5
V
9
mΩ
±100 nA
25
µA
NOTICE: ISC ...