SPD03N60C3

isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.2 IDM Drain Current-Single Pulsed 9.6 PD Total Dissipation @TC=25℃ 38 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 3.3 75 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.135mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=2A IGSS Gate-Source Leakage Current VGS=30V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=Is, VGS = 0V MIN TYP MAX UNIT 600 V 2.1 3.9 V 1.4 Ω 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datashe...