SPD04N60S5

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 9 PD Total Dissipation @TC=25℃ 50 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.5 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.2mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=2.8A IGSS Gate-Source Leakage Current VGS= 20V;VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=Is, VGS = 0V MIN TYP MAX UNIT 600 V 3.5 5.5 V 0.95 Ω 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifica...