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SPD06N60C3 Dataheets PDF



Part Number SPD06N60C3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SPD06N60C3 DatasheetSPD06N60C3 Datasheet (PDF)

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.75Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.2 IDM Drain Current-Single Pulsed 18.6 PD Total Diss.

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