Power MOSFET. IRF9Z20 Datasheet

IRF9Z20 MOSFET. Datasheet pdf. Equivalent

Part IRF9Z20
Description Power MOSFET
Feature www.vishay.com IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (.
Manufacture Vishay
Datasheet
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IRF9Z20 Datasheet
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www.vishay.com IRF9Z20, SiHF9Z20 Vishay Siliconix Power MO IRF9Z20 Datasheet
Recommendation Recommendation Datasheet IRF9Z20 Datasheet




IRF9Z20
www.vishay.com
IRF9Z20, SiHF9Z20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
-50
VGS = -10 V
26
6.2
8.6
Single
0.28
TO-220AB
S
G
S
D
G
D
P-Channel MOSFET
FEATURES
• P-channel versatility
• Compact plastic package
• Fast switching
• Low drive current
• Ease of paralleling
• Excellent temperature stability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The P-channel power MOSFETs are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common N-channel power MOSFETs such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with N-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
IRF9Z20PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VDS
VGS
VGS at - 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Inductive Current, Clamped
Unclamped Inductive Current (Avalanche current)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) c
L = 100 μH
TC = 25 °C
for 10 s
ILM
IL
PD
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25
c. 0.063" (1.6 mm) from case.
LIMIT
-50
± 20
-9.7
-6.1
-39
0.32
-39
-2.2
40
-55 to +150
300
UNIT
V
A
W/°C
A
A
W
°C
S16-0015-Rev. C, 18-Jan-16
1
Document Number: 90121
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



IRF9Z20
www.vishay.com
IRF9Z20, SiHF9Z20
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
1.0
-
MAX.
80
-
3.1
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = -250 μA
-50
VDS = VGS, ID = -250 μA
-2.0
VGS = ± 20 V
-
VDS = max. rating, VGS = 0 V
-
VDS = max. rating x 0,8, VGS = 0 V, TJ =125°C -
VGS = -10 V
ID = -5.6 A b
-
VDS = 2 x VGS, IDS = -5.6 A b
2.3
-
-
V
-
-4.0
V
- ± 500 nA
-
-250
μA
- -1000
0.20 0.28
3.5
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
-
VDS = -25 V,
-
f = 1.0 MHz, see fig. 9
-
-
VGS = -10 V
ID = -9.7 A, VDS = -0.8 max.
rating. see fig. 17
-
-
-
VDD = -25 V, ID = -9.7 A,
Rg = 18 , RD = 2.4, see fig. 16 (MOSFET
-
switching times are essentially independent
-
of operating temperature)
-
Between lead,
D
-
6 mm (0.25") from
package and center of
die contact
G
-
S
480
-
320
-
pF
58
-
17
26
4.1
6.2
nC
5.7
8.6
8.2
12
57
86
ns
12
18
25
38
4.5
-
nH
7.5
-
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
-9.7
A
-
-
-39
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 9.7 A, VGS = 0 V b
-
-
-6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
56
110 280 ns
TJ = 25 °C, IF = - 9.7 A, dI/dt = 100 A/μs b
0.17
0.34 0.85
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
S16-0015-Rev. C, 18-Jan-16
2
Document Number: 90121
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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