N-Channel MOSFET. FDP053N08B Datasheet

FDP053N08B MOSFET. Datasheet pdf. Equivalent

Part FDP053N08B
Description N-Channel MOSFET
Feature FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B N-Channel PowerTrench® MOSFET 80 V, 120 A, 5..
Manufacture ON Semiconductor
Datasheet
Download FDP053N08B Datasheet

FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B N-Cha FDP053N08B Datasheet
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packa FDP053N08B Datasheet
FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B N-Cha FDP053N08B Datasheet
Recommendation Recommendation Datasheet FDP053N08B Datasheet




FDP053N08B
FDP053N08B
N-Channel PowerTrench® MOSFET
80 V, 120 A, 5.3 mΩ
Features
• RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Low FOM RDS(on) * QG
• Low Reverse-Recovery Charge, Qrr = 62.5 nC
• Soft Reverse-Recovery Body Diode
• Enables High Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using ON Semicon-
ductor’s advanced PowerTrench® process that has been
tai-lored to minimize the on-state resistance while
maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 75A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP053N08B
80
±20
120*
85.2*
75
480
365
6.0
146
0.97
-55 to +175
300
FDP053N08B
1.03
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FDP053N08B/D



FDP053N08B
Package Marking and Ordering Information
Part Number
FDP053N08B-F102
Top Mark
FDP053N08B
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
80
ID = 250 μA, Referenced to 25oC
-
VDS = 64 V, VGS = 0 V
-
VDS = 64 V, TC = 150oC
-
VGS = ±20 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.5
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 75 A
-
gFS
Forward Transconductance
VDS = 10 V, ID = 75 A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgd
Vplateau
Qsync
Qoss
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Volatge
Total Gate Charge Sync.
Output Charge
Equivalent Series Resistance (G-S)
VDS = 40 V, VGS = 0 V,
f = 1 MHz
VDS = 40 V, VGS = 0 V
VDS = 40 V, ID = 75 A,
VGS = 10 V
VDS = 0 V, ID = 37.5 A
VDS = 40 V, VGS = 0 V
f = 1 MHz
-
-
-
-
-
-
-
(Note 4)
-
-
-
-
Typ.
-
0.089
-
-
-
-
4.2
100
4480
740
20.5
1333
65.4
26.7
15.3
6.0
52.4
64.2
1.2
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 40 V, ID = 75 A,
-
VGS = 10 V, RG = 4.7 Ω
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
-
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, VDD = 40 V, ISD = 75 A,
-
dIF/dt = 100 A/μs
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 15.6 A, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
32
30
44
16
-
-
-
59.3
62.5
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.5
V
5.3 mΩ
-
S
5960 pF
985
pF
-
pF
-
pF
85
nC
-
nC
-
nC
-
V
-
nC
-
nC
-
Ω
74
ns
70
ns
98
ns
42
ns
120*
A
480
A
1.3
V
-
ns
-
nC
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