FDP053N08B

FDP053N08B — N-Channel PowerTrench® MOSFET FDP053N08B N-Channel PowerTrench® MOSFET 80 V, 120 A, 5.3 mΩ Features RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A Low FOM RDS(on) * QG Low Reverse-Recovery Charge, Qrr = 62.5 nC Soft Reverse-Recovery Body Diode Enables High Efficiency in Synchronous Rectification Fast Switching Speed 100% UIL Tested RoHS Compliant Description This N-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. S Symbol Parameter VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Package limitation current is 75A. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Res...