SPD07N20G

SIPMOS® Power Transistor Features N channel Enhancement mode Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current dv/dt rated SPD 07N20 G VDS 200 V RDS(on) 0.4 Ω ID 7A 1 23 2 1 3 Type SPD07N20 G SPU07N20 G Package PG-TO252 PG-TO251 Pb-free Yes Yes Packaging Tape and Reel Tube Pin 1 Pin 2 Pin 3 G D S Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω IDpulse EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = 7 A, VDS = 160 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg Value 7 4.5 28 120 4 6 ±20 40 -55... +175 55/150/56 Unit A mJ kV/µs V W ˚C Rev. 2.5 Page 1 2013-06-27 SPD 07N20 G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 3.1 K/W - - 100 - - 75 - - 50 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V...