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SPD07N60C3
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
SPD07N60C3,ISPD07N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA...
INCHANGE
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