isc P-Channel MOSFET Transistor
SPP15P10P，ISPP15P10P
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.24Ω ·Enha...
isc P-Channel MOSFET
Transistor
SPP15P10P，ISPP15P10P
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.24Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-15
IDM
Drain Current-Single Pulsed
-60
PD
Total Dissipation @TC=25℃
128
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1.17 75
UNIT ℃/W ℃/W
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isc P-Channel MOSFET
Transistor
SPP15P10P，ISPP15P10P
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -1.54mA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -10.6A
IGSS
Gate-Source Leakage Current
VGS= -20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= -100V; VGS= 0V
VSD
Diode forward voltage
IF= -15A; VGS = 0V
MIN TYP MAX U...
