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SPP20N65C3
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
SPP20N65C3，ISPP20N65C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T...
INCHANGE
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