AD647

a FEATURES Low Offset Voltage Drift Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Currents Crosstalk: –124 dB at 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 250 ␮V max Low Input Voltage Noise: 2 ␮ V p-p High Open Loop Gain: 108 dB Low Quiescent Current: 2.8 mA max Low Total Harmonic Distortion Standard Dual Amplifier Pinout Available in Hermetic Metal Can Package, Hermetic Surface Mount (20-Pin LCC) and Chip Form MIL-STD-883B Processing Also Available Single Version Available: AD547 Ultralow Drift, Dual BiFET Op Amp AD647 PRODUCT DESCRIPTION The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a dual JFET. Ion-implantation permits the fabrication of matched JFETs on a monolithic bipolar chip. Laser wafer drift trimming trims both the initial offset voltage and its drift with temperature to provide offsets as low as 100 µV (250 µV max) and drifts of 2.5 µV/°C max. In addition to outstanding individual amplifier performance, the AD647 offers guaranteed and tested matching performance on critical parameters such as offset voltage, offset voltage drift and bias currents. The high level of performance makes the AD647 especially well suited for high precision instrumentation amplifier applications that previously w...