SPP15P10PH

SIPMOS® Small-Signal-Transistor Features P-Channel Enhancement mode Normal level Avalanche rated Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249_2_21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPP15P10P H -100 V 0.24 Ω -15 A PG-TO220-3 Type SPP15P10P H Package PG-TO220-3 Marking 15P10P Lead free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=-15 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 Value Unit -15 A -10.6 -60 230 mJ ±20 V 128 W -55 ... 175 °C 1C (1kV to 2kV) 260 °C 55/175/56 Rev 1.7 page 1 2011-09-01 Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Symbol Conditions SPP15P10P H min. Values typ. Unit max. R thJC - R thJA minimal footprint, steady state - 6 cm2 cooling area1), - steady state - 1.17 K/W - 75 - 45 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Tr...