isc N-Channel MOSFET Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.6Ω (max) ·Enhancement mode ·Fast Swi...
isc N-Channel MOSFET
Transistor
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.6Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±25
ID
Drain Current-Continuous
8
IDM
Drain Current-Single Pulsed
32
PD
Total Dissipation @TC=25℃
25
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 5
UNIT ℃/W
STF10NM60ND
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=250uA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=4A
IGSS
Gate-Source Leakage Current
VGS=± 25V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=600V; VGS= 0V
VSD
Diode forward voltage
IDR =8A, VGS = 0 V
Trr
Reverse recovery time
ISD=8A,di/dt=100A/us
STF10NM60ND
MIN TYP MAX UNIT
600
V
3
5
V
0.6
Ω
±100 nA
1
μA
1.5
V
118 200
nS
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