STF10NM60ND

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 32 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 5 UNIT ℃/W STF10NM60ND isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250uA RDS(on) Drain-Source On-Resistance VGS=10V; ID=4A IGSS Gate-Source Leakage Current VGS=± 25V;VDS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IDR =8A, VGS = 0 V Trr Reverse recovery time ISD=8A,di/dt=100A/us STF10NM60ND MIN TYP MAX UNIT 600 V 3 5 V 0.6 Ω ±100 nA 1 μA 1.5 V 118 200 nS NOTICE： ISC reserves the rights to make changes of the content herein the datas...