SUD70090E

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.9mΩ ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC/DC converter ·Power tools ·Motor drive switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.2 40 UNIT ℃/W ℃/W SUD70090E isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=20A IGSS Gate-Source Leakage Current VGS= ±20V; VDS= 0V VDS=100V; VGS= 0V IDSS Drain-Source Leakage Current DS=100V; VGS= 0V;Tj=125℃ VSD Diode forward voltage IF=10A, VGS = 0V SUD70090E MIN TYP MAX UNIT 100 V 2 4 V 8.9 mΩ ±250 nA 1 μA 150 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet a...