TK20J50D

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching voltage regulators ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 20 A ID(puls) Pulse Drain Current 80 A Ptot Total Dissipation@TC=25℃ 280 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.45 ℃/W TK20J50D isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA VSD Diode Forward On-Voltage IS=20A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=10A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 TK20J50D MIN TYPE MAX UNIT 500 V 2.0 4.0 V 1.7 V 0.27 Ω ±1 µA 10 µA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is p...