N-Channel MOSFET. 2SK757 Datasheet

2SK757 MOSFET. Datasheet pdf. Equivalent

Part 2SK757
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- :.
Manufacture INCHANGE
Datasheet
Download 2SK757 Datasheet

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current 2SK757 Datasheet
Recommendation Recommendation Datasheet 2SK757 Datasheet




2SK757
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current –ID=10A@ TC=25
·Drain Source Voltage-
: VDSS= 200V(Min)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25
10
A
Ptot
Total Dissipation@TC=25
50
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
2SK757
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



2SK757
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=160V; VGS= 0
VSD
Diode Forward Voltage
IF=10A; VGS=0
2SK757
MIN TYP MAX UNIT
200
V
1.0
5.0
V
0.33
Ω
±10 uA
250
uA
1.0
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)