isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK2071-01L
FEATURES ·High speed switching ·Low On-Resistance ·...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
2SK2071-01L
FEATURES ·High speed switching ·Low On-Resistance ·Low driving power ·High voltage ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
DESCRIPTION ·Switching
regulators ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
600
V
±30
V
2
A
6
A
20
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 6.25 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
2SK2071-01L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1.0mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VDS= VGS; ID= 10mA VGS= 10V; ID= 1.0A VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
VSD
Forward On-Voltage
IS= 4A; VGS= 0
MIN MAX UNIT
600
V
2.1
4
V
6.5
Ω
±100
nA
500
μA
1.41
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time w...
