8N80

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 8N80 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ ID= 4A ·Drain Current –ID=8.0A@ TC=25℃ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay driver . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A ICM Collector Current-Peak 32 A Ptot Total Dissipation@TC=25℃ 135 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.92 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 8N80 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA MIN TYP MAX UNIT 800 V 2 4.0 V RDS(ON)* Drain-Source On-stage Resistance VGS= 10V; ID= 4A 1.10 1.25 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 800V; VGS= 0 25 uA VSD* Diode Forward Voltag...