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IRF540NPBF Dataheets PDF



Part Number IRF540NPBF
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRF540NPBF DatasheetIRF540NPBF Datasheet (PDF)

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF540NPBF ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF540NPBF ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@ TC=25℃ 33 ID A Drain Current-continuous@ TC=100℃ 23 IDM Drain Current-Single Plused 110 A PD Total Dissipation @TC=25℃ 130 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.15 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF540NPBF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250uA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250uA RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID= 16A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS=0 VSD Forward On-Voltage IS= 16A; VGS=0 MIN MAX UNIT 100 V 2 4 V 44 mΩ ±100 nA 25 uA 1.2 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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