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IRFJ240

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor IRFJ240 DESCRIPTION ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage, high speed power switching ...

INCHANGE

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