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IRFPG40

INCHANGE

N-Channel MOSFET

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 4.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·F...


INCHANGE

IRFPG40

File Download Download IRFPG40 Datasheet


Description
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 4.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4.3 A ID(puls) Pulse Drain Current 17 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 40 ℃/W IRFPG40 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=4.3A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2.6A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 IRFPG40 MIN TYPE MAX UNIT 600 V 2.0 4.0 V 1.8 V 3.5 Ω ±100 nA 100 µA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet a...




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