isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current ID= 4.3A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·F...
isc N-Channel MOSFET
Transistor
·DESCRIPTION ·Drain Current ID= 4.3A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·AC Adapter, Battery Charge and SMPS
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
4.3
A
ID(puls)
Pulse Drain Current
17
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
40
℃/W
IRFPG40
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isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=4.3A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2.6A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
IRFPG40
MIN TYPE MAX UNIT
600
V
2.0
4.0
V
1.8
V
3.5
Ω
±100 nA
100
µA
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