isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 4.7A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Fa...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 4.7A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and uninterruptible
power supplies and motor drive
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4.7
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 ℃ MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
5NA80
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 800V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
5NA80
MIN TYPE MAX UNIT
800
V
2.25
3.75
V
2.4
Ω
±100 nA
25
uA
1700
190
pF
50
NOTICE: ISC r...