isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.13Ω(Max) ·High current capab...
isc N-Channel Mosfet
Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.13Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=26℃
21
A
IDM
Drain Current-Single Plused
84
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W
BUZ30A
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isc N-Channel Mosfet
Transistor
BUZ30A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
200
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.1
4.0
V
VSD
Diode Forward On-voltage
IS= 42A ;VGS= 0
1.6
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 13.5A
0.13
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS= 0
1
µA
Gf...
