isc N-Channel Mosfet Transistor
BUZ60
·FEATURES ·5.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Sp...
isc N-Channel Mosfet
Transistor
BUZ60
·FEATURES ·5.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·DESCRITION Designed for applications such as switching
regulators, switching converters, motor drivers,relay drivers and drivers for high power
bipolar switching
transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
400
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=35℃
5.5
A
IDM
Drain Current-Single Plused
22
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W
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isc N-Channel Mosfet
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUZ60
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
400
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.1
4.0
V
VSD
Diode Forward On-voltage
IS= 11A ;VGS= 0
1.6
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2.5A...
