isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugge...
isc N-Channel Mosfet
Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed especially for applications such as switching
regulators,
switching converters,motor drivers ,relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
50
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
13
A
IDM
Drain Current-Single Plused
48
A
PD
Total Dissipation @TC=25℃
40
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.1
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75
℃/W
BUZ71A
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
BUZ71A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
Gfs
Forward Transconductance
CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 1mA VGS= 10V; ID= 9A VGS= ±20V;VDS= 0 VDS=50V; VGS=0 IS= 26A; VGS=0 VDS= 25V；ID=9A
MIN MAX UNIT
50
V
2.1
4
V
0.12
Ω
±100 nA
250...
