N-Channel MOSFET. BUZ72L Datasheet

BUZ72L MOSFET. Datasheet pdf. Equivalent

Part BUZ72L
Description N-Channel MOSFET
Feature isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA is Power Dissipation Limited ·Nanosecon.
Manufacture INCHANGE
Datasheet
Download BUZ72L Datasheet

BUZ 72 L SIPMOS ® Power Transistor • N channel • Enhancemen BUZ72L Datasheet
SIPMOS ® Power Transistor BUZ 72L • N channel • Enhancemen BUZ72L Datasheet
isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·SOA BUZ72L Datasheet
Recommendation Recommendation Datasheet BUZ72L Datasheet




BUZ72L
isc N-Channel Mosfet Transistor
·FEATURES
·Low RDS(on)
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High current , high speed switching
·Solenoid and relay drivers
·DC-DC & DC-AC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25
10
A
IDM
Drain Current-Single Plused
40
A
Ptot
Total Dissipation@TC=25
40
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.1 /W
Rth j-a Thermal Resistance,Junction to Ambient
75 /W
BUZ72L
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BUZ72L
isc N-Channel Mosfet Transistor
BUZ72L
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
100
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
1.2
2.0
V
VSD
Diode Forward On-voltage
IS= 20A ;VGS= 0
1.5
V
RDS(on) Drain-Source On-Resistance
VGS= 5V; ID= 5A
0.2
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS= 0
1
µA
Gfs
Forward Transconductance
VDS= 25VID=5A
5.0
S
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
VGS=5V;
ID=3A;
VDD=30V;
RGS=50Ω
30
130
ns
130
tf
Fall Time
70
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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