isc N-Channel Mosfet Transistor
BUZ74
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resis...
isc N-Channel Mosfet
Transistor
BUZ74
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.0Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed for witched mode power supplies,motor control, welding,DC-DC & DC-AC converters, and in general purpose switching applications.switching
regulators, switching converters.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=30℃
2.4
A
IDM
Drain Current-Single Plused
9.5
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.1 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
BUZ74
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=0.25mA
500
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.1
4.0
V
VSD
Diode Forward On-voltage
IS= 4.8A ;VGS= 0
1.3
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 1.5A
3.0
Ω
IGSS
Gate-Body Leakage Curr...