BUZ74A

isc N-Channel Mosfet Transistor BUZ74A ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for witched mode power supplies,motor control, welding,DC-DC & DC-AC converters, and in general purpose switching applications.switching regulators, switching converters. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=27℃ 2.1 A IDM Drain Current-Single Plused 8.5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUZ74A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 500 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.1 4.0 V VSD Diode Forward On-voltage IS= 4.8A ;VGS= 0 1.3 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.5A 4.0 Ω IGSS Gate-Body Leakage Cu...