isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max) ·Ultra low on-resi...
isc N-Channel Mosfet
Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.018Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
50
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=101℃
60
A
IDM
Drain Current-Single Plused
240
A
Ptot
Total Dissipation@TC=25℃
250
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature Range
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.6 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W
BUZ100
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VSD
Diode Forward On-voltage
IS= 120A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 60A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=50V; VGS= 0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
...
