NPN Transistor. 2SD1803 Datasheet

2SD1803 Transistor. Datasheet pdf. Equivalent

Part 2SD1803
Description TO-252 NPN Transistor
Feature isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5.0A ·Low Saturation Volta.
Manufacture INCHANGE
Datasheet
Download 2SD1803 Datasheet

Ordering number:EN2085B PNP/NPN Epitaxial Planar Silicon Tr 2SD1803 Datasheet
UNISONIC TECHNOLOGIES CO., LTD 2SD1803 NPN SILICON TRANSIS 2SD1803 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collecto 2SD1803 Datasheet
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2SD1803 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 2SD1803 Datasheet
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2SD1803I Rev.E Mar.-2016 DATA SHEET / Descriptions TO-251 2SD1803I Datasheet
Recommendation Recommendation Datasheet 2SD1803 Datasheet




2SD1803
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector Current-IC= 5.0A
·Low Saturation Voltage -
: VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A
·Good Linearity of hFE
·Complement to Type 2SB1203
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Relay drivers,high-speed inverters,converters,
and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5.0
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
8.0
A
1.0
W
20
150
Tstg
Storage Temperature Range
-55~150
2SD1803
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2SD1803
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.0A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
hFE-1 Classifications
Q
R
S
T
70-140 100-200 140-280 200-400
2SD1803
MIN TYP. MAX UNIT
0.4
V
1.3
V
1.0 μA
1.0 μA
70
400
35
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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