INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD2163
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Be ideal for direct driving from the IC output of devices
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