N-Channel MOSFET. 2SK3681 Datasheet

2SK3681 MOSFET. Datasheet pdf. Equivalent

Part 2SK3681
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) .
Manufacture INCHANGE
Datasheet
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2SK3681
isc N-Channel MOSFET Transistor
·FEATURES
·Static Drain-Source On-Resistance
: RDS(on) = 160mΩ(Max)
·With low gate drive requirements
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
43
IDM
Drain Current-Single Pulsed
152
PD
Total Dissipation
600
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
0.21
UNIT
/W
2SK3681
isc websitewww.iscsemi.cn
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2SK3681
isc N-Channel MOSFET Transistor
2SK3681
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
3.0 3.5
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=26A
90
160
mΩ
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 600V; VGS= 0V;@Tc=25
VDS= 480V; VGS= 0V;Tc=125
ISD=43A, VGS = 0 V
±0.1 μA
25
250
μA
1.5
V
Ciss
Input Capacitance
2800 3200
pF
Coss
Output Capacitance
VDS=50V;VGS=0V; f=1.0MHz
97
pF
Crss
Reverse Transfer Capacitance
1.5
pF
Qg
Total Gate Charge
45
55
nC
Qgs
Gate-Source Charge
VDS=480V; ID=38A; VGS=10V
15
nC
Qgd
Gate-Drain Charge
11.5
nC
td(on)
Turn-on Delay Time
16
nS
tr
Turn-on Rise Time
td(off)
Turn-Off Delay Time
VDD=380V;ID=19A;
RG=1.7Ω;VGS=10V
13
nS
71
nS
tf
Turn-Off Fall Time
13
nS
isc websitewww.iscsemi.cn
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