N-Channel MOSFET. 2SK4115 Datasheet

2SK4115 MOSFET. Datasheet pdf. Equivalent

Part 2SK4115
Description N-Channel MOSFET
Feature iscN-Channel MOSFET Transistor 2SK4115 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.0Ω (.
Manufacture INCHANGE
Datasheet
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iscN-Channel MOSFET Transistor 2SK4115 ·FEATURES ·Low drai 2SK4115 Datasheet
Recommendation Recommendation Datasheet 2SK4115 Datasheet




2SK4115
iscN-Channel MOSFET Transistor
2SK4115
·FEATURES
·Low drain-source on-resistance:
RDS(ON) = 2.0(MAX)
·Enhancement mode:
Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Pulsed
21
A
PD
Total Dissipation @TC=25
150
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
0.833 /W
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2SK4115
iscN-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.0mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=3.5A
IGSS
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=720V; VGS= 0V
VSDF
Diode forward voltage
IDR =7A, VGS = 0 V
2SK4115
MIN TYP MAX UNIT
800
V
2
4
V
2.0
Ω
±10 μA
100 μA
1.7
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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