2SK4115

iscN-Channel MOSFET Transistor 2SK4115 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 2.0Ω (MAX) ·Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pulsed 21 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.833 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=3.5A IGSS Gate-Source Leakage Current VGS= ±25V;VDS= 0V IDSS Drain-Source Leakage Current VDS=720V; VGS= 0V VSDF Diode forward voltage IDR =7A, VGS = 0 V 2SK4115 MIN TYP MAX UNIT 800 V 2 4 V 2.0 Ω ±10 μA 100 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained her...