N-Channel MOSFET. IRF3415L Datasheet

IRF3415L MOSFET. Datasheet pdf. Equivalent


INCHANGE IRF3415L
Isc N-Channel MOSFET Transistor
·FEATURES
·With To-262 package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
150
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-ContinuousTc=25
Tc=100
43
30
A
IDM
Drain Current-Single Pulsed
150
A
PD
Total Dissipation @TC=25
200
W
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
0.75
UNIT
/W
IRF3415L
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IRF3415L Datasheet
Recommendation IRF3415L Datasheet
Part IRF3415L
Description N-Channel MOSFET
Feature IRF3415L; Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate char.
Manufacture INCHANGE
Datasheet
Download IRF3415L Datasheet




INCHANGE IRF3415L
Isc N-Channel MOSFET Transistor
IRF3415L
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
150
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=22A
IGSS
IDSS
VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
Drain-Source Leakage Current
VDS=150V; VGS= 0V;Tj=25
VDS=120V; VGS= 0V;Tj=125
Diode forward voltage
ISD=22A, VGS = 0 V
V
4.0
V
42
mΩ
±0.1 μA
25
250
μA
1.3
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







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