isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advan...
isc P-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤60mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Fast switching application.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-55
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
31
PD
Total Dissipation @TC=25℃
110
Tj
Max. Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c) Channel-to-case thermal resistance
1.4
℃/W
IRF5305S
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isc P-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -250μA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -16A
IGSS
Gate-Source Leakage Current
VGS= ±20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= -55V; VGS= 0V
VSD
Diode forward voltage
IS= -16A, VGS = 0V
IRF5305S
MIN TYP MAX UNIT
-55
V
-2
-4
V
60
mΩ
±100 nA
-25
μA
-1.3
V
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