isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXFH22N65X2
·FEATURES ·With low gate drive requirements ·Easy t...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXFH22N65X2
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGSS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
22
A
IDM
Drain Current-Single Pulsed
44
A
PD
Total Dissipation
390
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c) Channel-to-case thermal resistance 0.32
℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXFH22N65X2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
650
V
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=1.5mA
3.5
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=11A
145
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 650V; VGS= 0V;@Tc=25℃ Tc=125℃
ISD=22A, VGS = 0 V
±0.1 μA
10 1500
μA
1.4
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information cont...
