IXFH42N65X2A

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH42N65X2A ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 72mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 42 A IDM Drain Current-Single Pulsed 90 A PD Total Dissipation 660 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth(ch-c) Channel-to-case thermal resistance 0.19 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH42N65X2A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 650 V VGS(th) Gate Threshold Voltage VDS=±30V; ID=4mA 3.5 5.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A 72 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±30V;VDS= 0V VDS= 650V; VGS= 0V;@Tc=25℃ Tc=125℃ ISD=42A, VGS = 0 V ±100 nA 10 1500 μA 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the da...